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Electromechanical Device for Temperature Control of Internal Combustion Engines
(IOP Publishing Ltd, 2019-11-25)
Internal combustion engines are the most commonly used engines in the automotive world. However, these engines lack an overheating prevention system against cooling system failures when they exceed their normal operating ...
Low temperature performance of proton irradiated strained SOI FinFET
(2017-06-29)
This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, ...
Low temperature performance of proton irradiated strained SOI FinFET
(Ieee, 2017-01-01)
This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, ...
Temperature and Electric Field Influence on the Electrical Properties of Light-Emitting Devices Comprising PEDOT:PSS/GPTMS/Zn2SIO4:Mn Composites
(2018-01-01)
In the present study, we analyze the influence of temperature and active layer thickness on the electrical properties of electroluminescent devices comprising a polymeric conductive blend (poly(3,4 ethylenedioxythiophene ...
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K
(2018-04-25)
This paper studies the main low temperature electrical parameters of SOI n- and p-type FinFETs, standard and strained devices, submitted to proton irradiation. The study covers the range from room temperature down to 100 ...
Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes
(2017-01-03)
One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 cm2/Vs ...
Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes
(Ieee, 2016-01-01)
One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 ...
An adapted thermal-gradient block for the germination of photoblastic seeds
(Brazilian Archives of Biology and Technology, 2010-12-01)
Este trabalho descreve um bloco termo-gradiente com iluminação interna, adaptado para estudos com sementes que requerem luz para germinar. Para se aferir o desempenho do equipamento, este foi usado num experimento sobre o ...
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
(2017-04-25)
The goal of this work is to study the performance of current mirror circuits designed with line tunnel field effect transistor (TFET) devices and compare the suitability of this technology with alternatives such as point ...
Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
(2016)
© 2016 IOP Publishing Ltd.This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped ...