Buscar
Mostrando ítems 1-10 de 403
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates
(glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 ◦C for up to
14 h. The annealed ...
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon ( a-Si:H) films which were deposited on two different sub
strates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250"( for up to
14 h.The ...
Characterization of Silicon Rich Oxides with Tunable Optical Band Gap on Sapphire Substrates by Photoluminescence, UV/Vis and Raman Spectroscopy
(Soc Quimica MexicoMexico D FMéxico, 2008)
Rhodamine B-containing silica films from TEOS precursor: Substrate surface effects detected by photoluminescence
(Elsevier B.V., 2007-02-15)
This work presents the study of substrate surface effects on rhodamine B-containing silica films obtained from TEOS (tetraethylorthosilicate) acid hydrolysis. Soda-lime glass substrates were treated with basic solution ...
Rhodamine B-containing silica films from TEOS precursor: Substrate surface effects detected by photoluminescence
(Elsevier B.V., 2007-02-15)
This work presents the study of substrate surface effects on rhodamine B-containing silica films obtained from TEOS (tetraethylorthosilicate) acid hydrolysis. Soda-lime glass substrates were treated with basic solution ...
Local anodic oxidation on silicon (100) substrates using atomic force microscopy
(Universidad Nacional de Colombia Sede Medellín, 2012)
A characterization of local anodic oxidation using scanning probe microscopy is performed on a (100) silicon substrate. The formation of patterns varies as a function of voltage, humidity, and scanning speed. A set of ...
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-12-17)
We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates
(glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 ◦C for up to
14 h. The annealed ...
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon ( a-Si:H) films which were deposited on two different sub
strates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250"( for up to
14 h.The ...