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Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry
(Associa????o Brasileira de Energia Nuclear, 2021)
Temperature, Silicon Thickness and Intrinsic Length Influence on the Operation of Lateral SOI PIN Photodiodes
(2020-08-11)
This work presents an analysis of the influence of
intrinsic length region and the thickness of the silicon film on
the performance of lateral thin-film SOI PIN (Silicon on insulator
P-I-N photodiodes) when illuminated ...
Use of a PIN photodiode for dosimetric purposes in radiation processing
(Sao Paulo: ABEN, 2007, 2014)