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Electronic band-edge structure, effective masses, and optical absorption of Si1-xGex using an extended FPLAPW/VCA/LDA+U computational method
(Sociedade Brasileira de F??sica, 2006-06)
Electronic band-edge structure, effective masses, and optical absorption of Si1-xGex using an extended FPLAPW/VCA/LDA+U computational method
(Sociedade Brasileira de Física, 2006-06)
Electronic band-edge structure and optical properties of Si1-xGex are investigated theoretically emloying a full-potential linearized augmented plane wave (FPLAPW) method. The exchange-correlation potential in the local ...
Temperature evolution of defects and atomic ordering in Si1-x Gex islands on Si(001)
(Universidade Federal de Minas GeraisBrasilICX - DEPARTAMENTO DE FÍSICAUFMG, 2016)
Caracterización de películas delgadas de Si1-xGex depositadas mediante la combinación de plasmas de Si y Ge producidos por láser pulsado
(Biblioteca Digital wdg.biblioUniversidad de Guadalajara, 2020-02-07)
Electronic structure of holes in modulation doped p-Si1-xGex/Si strained quantum wells in a magnetic field
(Pergamon-elsevier Science LtdOxfordInglaterra, 1998)
Optical characterization and metal–nonmetal transition of boron-doped Si1−xGex alloy
(1999)
We report measurements of the optical band gap of Si1−xGex, by photoacoustic spectroscopy technique. The material has been obtained by a mechanical alloying process. Due to its technological application, in high-performance ...
Direct observation of the acoustic gaps in Ge/GexSi1-x superlattices
(John Wiley & Sons LtdW SussexInglaterra, 1999)