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DC method for self-heating estimation applied to FinFET
(2018-10-26)
This paper reports an extension on the application of the DC method for the estimation of self-heating effects from planar to FinFET devices, verified through theoretical considerations and numerical simulations. In the ...
Simple method for detection of the self-heating signature
(2017-11-15)
This paper reports a simple method for detection of the self-heating effect through a special signature, without the need of specific structures or high frequency systems, even in devices presenting positive output ...
Simple method for detection of the self-heating signature
(Ieee, 2017-01-01)
This paper reports a simple method for detection of the self-heating effect through a special signature, without the need of specific structures or high frequency systems, even in devices presenting positive output ...
Multi-length and time scale thermal transport using the lattice Boltzmann method with application to electronics cooling
(PERGAMON-ELSEVIER SCIENCE LTD, 2006)
The lattice Boltzmann method (LBM) is used to investigate one-dimensional, multi-length and -time scale transient heat conduction in crystalline semiconductor solids, in which sub-continuum effects are important. The ...
Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
(2016)
© The Institution of Engineering and Technology 2016.In this paper, the performance of asymmetric self-cascode (A-SC) fully depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors ...
Fabrication and electrical characterization of new materials for metal-oxide-semiconductor technology
(Universidade Estadual Paulista (Unesp), 2019-12-05)
The Metal-Oxide-Semiconductor (MOS) technology has played a key role in the IC industry since its inception due to its excellent characteristics in digital applications, high scalability, ease of manufacturing processes, ...
Avaliação do MOSFET UTBB FD-SOI com SELBOX em configuração DTMOS
(Universidade Estadual Paulista (Unesp), 2020-10-30)
O objetivo principal deste trabalho é o estudo de transistores SOI (Silicon On Insulator) UTBB (Ultra-thin Body and Buried oxide) de canal tipo-n com SELBOX (SELective Buried OXide) em configuração DTMOS (Dynamic Threshold-Voltage ...
Estudo teórico e experimental de transistores de múltiplas portas fabricados em estruturas de nanofios
(Universidade Estadual Paulista (Unesp), 2018)
The technological advancement of semiconductor devices is based on increasing their scalability over the years, ensuring greater performance of electronic circuits and better utilization of the occupied area by integrated ...
Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation
(2021-03-01)
In this work, the influence of proton-irradiation in the voltage gain of two-stage operational transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect transistors (FinFETs) is studied. ...