Buscar
Mostrando ítems 1-10 de 1446
Metal-Organic Semiconductor Nanostructures for Surface-Enhanced Raman Scattering
(Soc Applied Spectroscopy, 2011-02-01)
Metal-organic semiconductor films are fabricated as co-evaporated films. It is demonstrated that the technique can be used to fabricate metal-semiconductor surface-enhanced Raman scattering (SERS) or surface-enhanced ...
Metal-Organic Semiconductor Nanostructures for Surface-Enhanced Raman Scattering
(Soc Applied Spectroscopy, 2011-02-01)
Metal-organic semiconductor films are fabricated as co-evaporated films. It is demonstrated that the technique can be used to fabricate metal-semiconductor surface-enhanced Raman scattering (SERS) or surface-enhanced ...
Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties
(2007-04-08)
We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties - as well as surface morphologies - present a strong dependence on growth parameters, mainly the V/III ratio. ...
Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties
(2007-04-08)
We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties - as well as surface morphologies - present a strong dependence on growth parameters, mainly the V/III ratio. ...
Transporte electrónico en silicio poroso nanoestructurado
(2013-03-25)
En este trabajo se fabricaron dispositivos basados en silicio poroso nanoestructurado, con el fin de estudiar y caracterizar sus propiedades de transporte eléctrico, buscando acumular datos que permitan en un futuro ...
Metal-Organic Semiconductor Nanostructures for Surface-Enhanced Raman Scattering
(Soc Applied Spectroscopy, 2014)
Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction
(AMER INST PHYSICS, 2009)
An x-ray diffraction method, based on the excitation of a surface diffracted wave, is described to investigate the capping process of InAs/GaAs (001) quantum dots (QDs). It is sensitive to the tiny misorientation of (111) ...
DFT study of the effect in surface energy of metallic overlayers in semiconductorsEstudio DFT del efecto en la energía superficial de sobrecapas metálicas en semiconductores
(USFQ PRESS, departamento editorial de la Universidad San Francisco de Quito USFQ, 2012)