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Spontaneous spin polatization in doped semiconductor quantum wells
(Springer, 2005-12)
We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We predict that this transition could be observed in narrow quantum wells at ...
Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields
(2008-03-01)
We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) ...
Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields
(2008-03-01)
We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) ...
Electron g factor anisotropy in asymmetric III???V semiconductor quantum wells
(SEMICONDUCTOR SCIENCE AND TECHNOLOGY (PRINT), 2016-09-27)
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
(A V S AMER INST PHYSICS, 2010)
In the case of quantum wells, the indium segregation leads to complex potential profiles that are hardly considered in the majority of the theoretical models. The authors demonstrated that the split-operator method is ...
Rolled-up quantum wells composed of nanolayered InGaAs/GaAs heterostructures as optical materials for quantum information technology
(Universidade Federal de Minas GeraisBrasilICX - DEPARTAMENTO DE FÍSICAUFMG, 2021)
Laser dressing effects in low-dimensional semiconductor systems
(Pergamon-elsevier Science LtdOxfordInglaterra, 2000)
Photocurrent Calculation of Intersubband Transitions to Continuum-Localized States in GaAs/AlGaAs Multiquantum Wells for Mid-Infrared Photodetector
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2013)