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Impurity cluster effects in high- and low-doping semiconductor materials
(2011)
The cluster-like impurity effect in semiconductor materials as Si, GaN, GaAs, and 4H[BOND]SiC for impurity concentrations spanning the metallic to the insulating regimes, i.e., from high- to low-doping concentration, has ...
Semiconductor/porous silica glass nanocomposites via the single-source precursor approach
(Pergamon-elsevier Science LtdOxfordInglaterra, 2006)
Theoretical study of the XP3 (X = Al, B, Ga) clusters
(ELSEVIER SCIENCE BVAMSTERDAM, 2012)
The lowest singlet and triplet states of AlP3, GaP3 and BP3 molecules with C-s, C-2v and C-3v symmetries were characterized using the B3LYP functional and the aug-cc-pVTZ and aug-cc-pVQZ correlated consistent basis sets. ...
Impurity states in the narrow band-gap semiconductor n-type InSb
(1996)
We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant ...
Insulator-to-metal transition driven by clustering of solitons in polyacetylene
(1997-03-15)
It's believed that the simple Su-Schrieffer-Heeger Hamiltonian can not predict the insulator to metal transition of transpolyacetylene (t-PA). The soliton lattice configuration at a doping level y=6% still has a semiconductor ...
Insulator-to-metal transition driven by clustering of solitons in polyacetylene
(1997-03-15)
It's believed that the simple Su-Schrieffer-Heeger Hamiltonian can not predict the insulator to metal transition of transpolyacetylene (t-PA). The soliton lattice configuration at a doping level y=6% still has a semiconductor ...
Effect of three-donor cluster on infrared absorption of semiconductor systems
(Solid State Communications, 1990)