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On the onset of InAs islanding on InP: influence of surface steps
(Elsevier Science BvAmsterdamHolanda, 1997)
Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties
(2007-04-08)
We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties - as well as surface morphologies - present a strong dependence on growth parameters, mainly the V/III ratio. ...
Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties
(2007-04-08)
We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties - as well as surface morphologies - present a strong dependence on growth parameters, mainly the V/III ratio. ...
Inexpensive methodology to prepare TiO2/CuInS2 hetero-junctions for photovoltaic applications
(IOP Publishing, 2017-04)
TiO2 and CuInS2 (CIS) hetero-junctions were prepared using low-cost, solution-based techniques. Using conducting glass (FTO) as substrate, a thin film of TiO2 and an ultrathin film of In2S3 that acts as buffer layer were ...
Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy
(Elsevier Science BvAmsterdamHolanda, 2004)
Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures
(2005-06-20)
Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V ...
Electrical properties of individual and small ensembles of InAs/InP nanostructures
(2006-05-01)
We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and ...