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Urbach energy parameter of flash evaporated amorphous gallium arsenide films
(2002-04-01)
The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from ...
Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
(Institute of Electrical and Electronics Engineers Inc., 2014)
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results ...
Urbach energy parameter of flash evaporated amorphous gallium arsenide films
(2002-04-01)
The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from ...
Nonlinear device model for GaN and GaAs microwave transistors including memory effects
(Institute of Electrical and Electronics Engineers Inc., 2015)
In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique can model one of the most critical phenomena in telecommunications, frequency dispersion effects which is related to memory ...
Crystallization of amorphous GaAs films prepared onto different substrates
(2002-04-01)
This work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm ...
Crystallization of amorphous GaAs films prepared onto different substrates
(2002-04-01)
This work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm ...
Role of V/III ratio on atomic ordering and surface morphology of InGaP layers grown by chemical beam epitaxy
(Elsevier Science BvAmsterdamHolanda, 2003)