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Polarized and resonant Raman spectroscopy on single InAs nanowires
(Amer Physical SocCollege PkEUA, 2011)
Influence of deformations on the reentrant conductance feature in semiconducting nanowires
(2022-02-28)
Helical states can be measured through the observation of the reentrant behavior, which is a dip in the conductance probed in semiconducting nanowires (NWs) with strong spin-orbit coupling (SOC) under the presence of an ...
Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures
(2005-06-20)
Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V ...
Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures
(2005-06-20)
Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V ...
Vertical stacks of InAs quantum wires in an InP matrix
(Elsevier Science BvAmsterdamHolanda, 2003)
Catalyst-free Synthesis Of A Three-dimensional Nanoworm-like Gallium Oxide-graphene Nanosheet Hybrid Structure With Enhanced Optical Properties
(Royal Soc ChemistryCambridge, 2016)
Thermal evaporation furnace with improved configuration for growing nanostructured inorganic materials
(Amer Inst PhysicsMelvilleEUA, 2011)