beta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both ...

The UV photocurrent response of thin films of wide bandgap semiconductors such as zinc oxide (ZnO) can be applied to a great number of electronic devices aiming applications in environmental sensing or UV-detection. ...

Successful manufacture of a simple, low cost sprayed Schottky diode compatible with printed electronics using reduced graphene oxide (rGO) as a semi-transparent top electrode and zinc oxide (ZnO) as active layer has been ...

$\beta $ -Ga2O3 is one of the promising semiconductor materials that has been widely used in power electronics and ultraviolet (UV) detectors due to its wide bandgap and high sensitivity to UV light. Specifically, for the ...

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single ...

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single ...

Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) ...

For medical diagnostic applications, there is currently a strong need for systems that comprises simple detectors. In this paper, we report the fabrication of heterojunction between p-doped polypyrrole and n-doped silicon ...