In this work we studied electrical barriers existing at CaCu(3)Ti(4)O(12) (CCTO) ceramics using dc electrical measurements. CCTO pellets were produced by solid state reaction method and X-ray diffractograms showed which ...

The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. ...

The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the ...

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single ...

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single ...

In this work we studied electrical barriers existing at CaCu(3)Ti(4)O(12) (CCTO) ceramics using dc electrical measurements. CCTO pellets were produced by solid state reaction method and X-ray diffractograms showed which ...

Chemoresistive properties of crystalline solids strongly depend on the concentration of stoichiometric defects. In the case of tin oxide, oxygen vacancies are a case in point of such kind of defects. We address the problem ...

Varistores de ZnO fueron estudiados mediante el empleo de microscopía y espectroscopía de efecto túnel. Las curvas de corriente túnel vs. tensión indican que las muestras presentan una conducta rectificante. Dado que la ...