beta-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a beta-Ga2O3 Schottky diode, in which the same electrode material is used for both ...

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single ...

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single ...

The UV photocurrent response of thin films of wide bandgap semiconductors such as zinc oxide (ZnO) can be applied to a great number of electronic devices aiming applications in environmental sensing or UV-detection. ...

Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorus emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction ...