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Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures
(2016-09-01)
This paper presents an experimental analysis of the analog application figures of merit: the intrinsic voltage gain (AV) and unit gain frequency, focusing on the performance comparison between silicon triple gate pFinFET ...
Enhanced Model for ZTC in Irradiated and Strained pFinFET
(Ieee, 2017-01-01)
This paper presents for the first time the inclusion of a p-type transistor in the CM (Camilo/Martino) ZTC (Zero Temperature Coefficient) analytical model. It was used for strained SOI pFinFETs submitted to proton radiation, ...
Low temperature performance of proton irradiated strained SOI FinFET
(2017-06-29)
This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, ...
Low temperature performance of proton irradiated strained SOI FinFET
(Ieee, 2017-01-01)
This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, ...
Proton Radiation Influence on SOI FinFET Trade-Off between Transistor Efficiency and Unit Gain Frequency
(Ieee, 2016-01-01)
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, ...
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view
(2019-05-01)
This paper compares, for the first time, the total ionizing dose degradation of 600 keV proton-irradiated silicon triple gate SOI tunnel FETs (TFETs) with SOI FinFETs fabricated with the same structure on the same wafer. ...
Enhanced model for ZTC in irradiated and strained pFinFET
(2017-11-15)
This paper presents for the first time the inclusion of a p-type transistor in the CM (Camilo/Martino) ZTC (Zero Temperature Coefficient) analytical model. It was used for strained SOI pFinFETs submitted to proton radiation, ...
New method for observing self-heating effect using transistor efficiency signature
(Ieee, 2017-01-01)
This paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through ...
New method for observing self-heating effect using transistor efficiency signature
(2018-03-07)
This paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through ...
Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
(2016-11-02)
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, ...