Nanoscale inorganic semiconductors (with interfacial thickness <10 nm) have superior stability compared to soft organic compounds and are important for the development of enhanced reagentless sensing devices. As a proof ...

In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive ...

Electron mobility was studied in lattice-matched short-period InGaAs/InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface ...

En este trabajo se fabricaron dispositivos basados en silicio poroso nanoestructurado, con el fin de estudiar y caracterizar sus propiedades de transporte eléctrico, buscando acumular datos que permitan en un futuro ...

A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the ...

In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different ...

The punctual character and random nature of the impurity positions in depletion regions lead to inhomogeneities that can significantly affect the potential intergranular barriers at polycrystalline semiconductors and, in ...