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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Aguirre, Fernando Leonel; Rodriguez Fernandez, Alberto; Pazos, Sebastián Matías; Suñé, Jordi; Miranda, Enrique; Palumbo, Felix Roberto Mario (Institute of Electrical and Electronics Engineers, 2019-08)

In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying ...

Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

Maldonado, David; Aguirre, Fernando Leonel; González Cordero, G.; Roldán, A. M.; González, M. B.; Jiménez Molinos, F.; Campabadal, F.; Miranda, E.; Roldán, J. B. (American Institute of Physics, 2021-08)

The relevance of the intrinsic series resistance effect in the context of resistive random access memory (RRAM) compact modeling is investigated. This resistance notably affects the conduction characteristic of resistive ...

Memristive behavior of the SnO2/TiO2 interface deposited by sol–gel

Universidade Estadual Paulista (Unesp) (2017-07-15)

A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared ...

Graphene Oxide Complexes for Resistive Memory Device Applications

Khurana, Geetika; Katiyar, Ram S. (Consejero) (2016)

Nonvolatile memories

Universidade Estadual Paulista (Unesp); Federal University of Itajubá (Unifei); CEITEC S.A Semiconductors; Universidade Federal de São Carlos (UFSCar) (2018-01-01)

The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic ...

On the thermal models for resistive random access memory circuit simulation

Roldán, Juan B.; González Cordero, Gerardo; Picos, Rodrigo; Miranda, Enrique; Palumbo, Félix Roberto Mario; Jiménez Molinos, Francisco; Moreno, Enrique; Maldonado, David; Baldomá, Santiago B.; Moner Al Chawa, Mohamad; de Benito, Carol; Stavrinides, Stavros G.; Suñé, Jordi; Chua, Leon O. (MDPI AG, 2021-05)

Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, ...

El futuro del almacenamiento de información estudio de la tecnología de memorias resistivas basado en el modelo de contactos de punto cuántico

Moreno Lanas, Jorge Esteban (Quito, 2013, 2014)

Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults

Aguirre, Fernando Leonel; Pazos, Sebastián Matías; Palumbo, Félix Roberto Mario; Morell, Antoni; Suñé, Jordi; Miranda, Enrique (MDPI, 2021-10-06)

In this work, the effect of randomly distributed stuck-at faults (SAFs) in memristive crosspoint array (CPA)-based single and multi-layer perceptrons (SLPs and MLPs, respectively) intended for pattern recognition tasks is ...

Thermal study of multilayer resistive random access memories based on HfO 2 and Al 2 O 3 oxides

Cazorla, Manuel; Aldana, Samuel; Maestro, Marcos; González, Mireia Bargalló; Campabadal, Francesca; Silva Moreno, Enrique Esteban; Jiménez-Molinos, Francisco; Roldán, Juan Bautista (AVS Science and Technology Society, 2019)

An in-depth analysis including both simulation and experimental characterization of resistive random access memories (RRAMs) with dielectric stacks composed of two layers of HfO 2 and Al 2 O 3 stacked in different orders ...

Degradación de estructuras MOS (metal-óxido-semiconductor) y sus aplicaciones.

Aguirre, Fernando Leonel (Escuela de Posgrado - UTN FRBA, 2021)