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Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
(Pergamon-Elsevier Science Ltd, 2016-01)
In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3,HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration ...
Impact of bilayered oxide stacks on the breakdown transients of Metal-Oxide-Semiconductor devices: an experimental study
(American Institute of Physics, 2020-05)
The role of the bilayered structure of the gate oxide on the dynamics of progressive breakdown is systematically studied on Au / Cr / HfO 2 / Al 2 O 3 / InGaAs metal-oxide-semiconductor stacks. Samples with bilayered oxides ...
Physical mechanism of progressive breakdown in gate oxides
(American Institute of Physics, 2014-06)
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of ...
Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials
(American Institute of Physics, 2017-03)
In this work, the breakdown transients of Al2O3- and HfO2 based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties ...
Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
(Institute of Electrical and Electronics Engineers, 2019-08)
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying ...
Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance
(American Institute of Physics, 2020-07)
In this work, breakdown transients of multilayered gate oxide stacks were analyzed to study the impact of the interfaces between oxides on the heat dissipation considering an electromigration-based progressive breakdown ...
Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
(Japan Society Applied Physics, 2021-10)
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on ...
Rwanda: from political breakdown to... stability?
(Universidad de La Sabana, 2020)
This article discusses the Rwanda’s economic & political stability in the post-1994 Genocide, determining if it should be a development model for the Africa’s Great Lakes region. To enhance the theme, the text is divided ...
Bimodal Dielectric Breakdown in Electronic Devices Using Chemical Vapor Deposited Hexagonal Boron Nitride as Dielectric
(Blackwell Publishing, 2018-03)
Multilayer hexagonal boron nitride (h-BN) is an insulating 2D material that shows good interaction with graphene and MoS2, and it is considered a very promising dielectric for future 2D-materials-based electronic devices. ...
Valorization of mangoes with internal breakdown through the production of edible films by continuous solution casting
(2021-06-01)
Mangoes are usually wasted by consumers due to a physiological disorder known as Internal breakdown (IB). In this study, Palmer mangoes affected by IB were valorized by turning into edible films by continuous solution ...