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Filmes finos de SiO2 nanoporosos produzidos por irradiação iônica: dependência com a energia de irradiação e propriedades refletoras
(Pontifícia Universidade Católica do Rio Grande do SulPorto Alegre, 2007)
lons of different atomic number and with energies between 1 to 2200 MeV were used to bombard at low fluences, vitreous Si02 films thermally grown onto Si wafers. After the irradiation, the films were etched in aqueous HF ...
Filmes finos de SiO2 nanoporosos produzidos por irradiação iônica: dependência com a energia de irradiação e propriedades refletoras
(Pontifícia Universidade Católica do Rio Grande do SulPorto Alegre, 2007)
lons of different atomic number and with energies between 1 to 2200 MeV were used to bombard at low fluences, vitreous Si02 films thermally grown onto Si wafers. After the irradiation, the films were etched in aqueous HF ...
Structural quality in single crystalline CdSe ingots grown by PVT: Qualidade estrutural em lingotes de CdSe monocristalinos crescidos por PVT
(Universidade Federal do Rio de Janeiro, 2020-04)
CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing ...