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Consistent model for drain current mismatch in mosfets using the carrier number fluctuation theory
(IEEE, 2004)
This work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for ...
Modelo de cálculo de perdas por comutação e método de seleção de tecnologias de transistores FET aplicados a conversores estáticos
(Universidade Federal de Santa MariaBrasilEngenharia ElétricaUFSMPrograma de Pós-Graduação em Engenharia ElétricaCentro de Tecnologia, 2020-02-07)
This dissertation presents an analytical model to assist in the calculation of switching losses and
a methodology for selecting MOSFETs that with breakdown voltages greater than 100 V. The
model was developed based on ...
Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters
(IEEE Transactions on Electron Devices, 2013)
EOT sub-nanometric and degradation of mobility: moving towards a physical limit with modern manufacturing techniques?EOT sub-nanométrico y degradación de la movilidad: ¿hacia un límite físico con las técnicas de fabricación modernas?
(USFQ PRESS, departamento editorial de la Universidad San Francisco de Quito USFQ, 2010)
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
(2017)
© 2016 Elsevier LtdThe Drain Induced Barrier Lowering (DIBL) behavior in Ultra-Thin Body and Buried oxide (UTBB) transistors is investigated in details in the temperature range up to 150 °C, for the first time to the best ...
Simple noise formulas for MOS analog design
(2003)
The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker ...