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CMOS-based active pixel for low-light-level detection: Analysis and measurements
(2007-12-01)
An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance ...
CMOS-based active pixel for low-light-level detection: Analysis and measurements
(2007-12-01)
An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance ...
MSM photodetector with an integrated microlens array for improved optical coupling
(John Wiley & Sons IncNew YorkEUA, 2000)
Black phosphorus photodetector for multispectral, high-resolution imaging
(Amer Chemical Soc, 2014-11)
Black phosphorus is a layered semiconductor that is intensely researched in view of applications in optoelectronics. In this letter, we investigate a multilayer black phosphorus photodetector that is capable of acquiring ...
Influence of photo-detector’s dead-time on the speckle contrast for blood flow measurement
(Centro de Ciencias Aplicadas y Desarrollo Tecnológico, 2016)
Photosensitivity characterization of nanostructured tin oxide films and alternative photodetector application
(2011-04)
In this paper, we present an analysis of the photosensitivity property of electrical resistance of nanostructured porous tin oxide films (SnO2) deposited on Si substrates using a spray method. Based on this property, we ...
Photosensitivity Characterization of Nanostructured Tin Oxide Films and Alternative Photodetector Application
(2011)
—In this paper, we present an analysis of the photosensitivity property of electrical resistance of nanostructured porous
tin oxide films SnO ! deposited on Si substrates using a spray method. Based on this property, we ...