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Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films
(2012-10-31)
Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film ...
Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films
(2012-10-31)
Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film ...
Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method
(2002-01-01)
Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In ...
Microstructural investigation of the PZT films prepared from the suspension of nanocrystalline powders
(Elsevier B.V., 2004-01-01)
PZT thin films of composition Pb(Zr0.52Ti0.48)O-3 were prepared by a novel method from the suspension of nanocrystalline PZT powders. The powders were obtained by mechanochemical synthesis. Films were deposited on silicon ...
Microstructural investigation of the PZT films prepared from the suspension of nanocrystalline powders
(Elsevier B.V., 2004-01-01)
PZT thin films of composition Pb(Zr0.52Ti0.48)O-3 were prepared by a novel method from the suspension of nanocrystalline PZT powders. The powders were obtained by mechanochemical synthesis. Films were deposited on silicon ...
On the influence of pyrochlore phase on ferroelectric and dielectric properties of PZT thin films
(2020-02-17)
The intrinsic contribution of dielectric permittivity was obtained in thin films of PZT pyrolyzed at different temperatures. Pyrochlore phases were observed in films pyrolyzed at temperatures above 350 °C, while only the ...
Filmes finos de LaNiO3 e PZT preparados pelo métodos das soluções precursoras poliméricas e depositados em substratos de silício
(Universidade Estadual Paulista (Unesp), 2006-04-24)
Nesta tese estudou-se a preparação de filmes finos de PZT não dopados e dopados com Nióbio, depositados sobre substratos de Pt/Ti/SiO2/Si para aplicações em memórias não voláteis de acesso randômico (NVRAM) e memórias ...