Buscar

Mostrando ítems 1-10 de 63

Multi-layers Lateral SOI PIN Photodiodes for Solar Cells Applications

Universidade Estadual Paulista (Unesp); Ctr Univ FEI (Ieee, 2019-01-01)

In this paper, a lateral PIN photodiode based on a SOI wafer has been studied through numerical simulations. This device can be used as a solar cell embedded in a CMOS circuit in order to propose autonomous ultralow-power ...

Multi-layers lateral SOI PIN photodiodes for solar cells applications

Universidade Estadual Paulista (Unesp); Centro Universitário FEI-São Bernardo Do Campo (2019-08-01)

Portable radiation detector with PIN photodiode for x-rays and CsI(Tl) scintilator with photodiode for gamma rays

CANAZZA, S.A.; GON??ALVES, S.A.; COSTA, F.E.; HAMADA, M.M.; INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE (Associa????o Brasileira de Energia Nuclear, 2021)

Development of neutron detector using the PIN photodiode with polyethylene (n,p) converter

MESQUITA, C.H.; MADI FILHO, T.; HAMADA, M.M. (2003)

Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry

PASCOALINO, K.; GONCALVES, J.A.C.; CAMARGO, F.; BUENO, C.C.; INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE (Associa????o Brasileira de Energia Nuclear, 2021)

Temperature, Silicon Thickness and Intrinsic Length Influence on the Operation of Lateral SOI PIN Photodiodes

RODRIGUES, EDSON JOSÉ; Michelly De Souza (2021)

Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

Novo C.; Giacomini R.; Doria R.; Afzalian A.; Flandre D. (2014)

This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes. Measurements performed on fabricated devices show a fivefold improvement of the IDR when the devices are biased in accumulation ...

Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation

Novo C.; Giacomini R.; Afzalian A.; Flandre D. (2013)

This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the ...

Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation

Novo C.; Giacomini R.; Afzalian A.; Flandre D. (2013)

Low-cost amplifier for alpha detection with photodiode

DOMIENIKAN, CLAUDIO; COSTA, PRISCILA; GENEZINI, FREDERICO A.; ZAHN, GUILHERME S.; INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE (Associa????o Brasileira de Energia Nuclear, 2018)

1
2
3
4
. . .
7

Buscar

Filtros

Multi-layers Lateral SOI PIN Photodiodes for Solar Cells Applications

Multi-layers lateral SOI PIN photodiodes for solar cells applications

Portable radiation detector with PIN photodiode for x-rays and CsI(Tl) scintilator with photodiode for gamma rays

Development of neutron detector using the PIN photodiode with polyethylene (n,p) converter

Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry

Temperature, Silicon Thickness and Intrinsic Length Influence on the Operation of Lateral SOI PIN Photodiodes

Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation

Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation

Low-cost amplifier for alpha detection with photodiode