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Probing the effects of oxygen-related defects on the optical and luminescence properties in CaCu3Ti4O12 ceramics
(2018-12-01)
The formation of oxygen-related lattice defects and their influence on optical and electronic properties in CaCu3Ti4O12 (CCTO) ceramics were studied by controlling the oxygen partial pressure during the sintering process ...
Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques
(Elsevier, 2021-08)
We experimentally studied the formation of vacancy clusters and oxygen related defects in uranium oxide (UOx) thin films (<70 nm) changing the stoichiometry in the x = 2.2?3.5 range. Films were deposited on Si(0 0 1) by ...
Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources
(1999-12-01)
Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type ...
Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources
(1999-12-01)
Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type ...
Contribution of oxygen related defects to the electronic transport in SnO2 sol-gel films
(2001-01-01)
SnO2 deposited by sol-gel is a polycrystalline film with small grain size. Oxygen present at a less grain boundary traps electrons and then the depletion layer around the potential barrier of the grain boundary becomes ...
Contribution of oxygen related defects to the electronic transport in SnO2 sol-gel films
(2001-01-01)
SnO2 deposited by sol-gel is a polycrystalline film with small grain size. Oxygen present at a less grain boundary traps electrons and then the depletion layer around the potential barrier of the grain boundary becomes ...
Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
(IOP Publishing, 2015-11)
Samples of amorphous silica were implanted with Au ions at an energy of 190 keV and fluences of 1×1014 ions cm−2and 5×1014 ions cm−2 at room temperature. The damage produced by ion implantation and its evolution with the ...
325 degrees C thermoluminescence peak growth in quartz related to oxygen vacancies
(Gordon Breach Sci Publ Ltd, 1998-01-01)
The thermoluminescence intensity as a function of gamma-ray dose of the 325 degreesC peak, in quartz grains extracted from sea sediments and from fluvial aeolic dunes, is studied. It is found that the response curve at low ...