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Strain- and electric field-induced band gap modulation in nitride nanomembranes
(2013-05-15)
The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band ...
Direct profiling of polarization fields in nitride semiconductors at nanometric scale using electron holography in the transmission electron microscope
(Universidad Nacional de Ingeniería, 2019)
Direct profiling of polarization fields in nitride semiconductors at nanometric scale using electron holography in the transmission electron microscope
(Universidad Nacional de Ingeniería, 2019)
Strain- and electric field-induced band gap modulation in nitride nanomembranes
(2013-05-15)
The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band ...
Velocity overshoot onset in nitride semiconductors
(Amer Inst PhysicsMelvilleEUA, 2000)
Nonlinear hole transport and nonequilibrium thermodynamics in group III-nitrides under the influence of electric fields
(Amer Inst PhysicsMelvilleEUA, 2007)
Nonlinear transport in n-III-nitrides: Selective amplification and emission of coherent LO phonons
(Pergamon-elsevier Science LtdOxfordInglaterra, 2006)
Urbach's tail in III-nitrides under an electric field
(Amer Inst PhysicsMelvilleEUA, 2001)