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Conduction mechanisms in SnO2 single-nanowire gas sensors: An impedance spectroscopy study
(Elsevier Science Sa, 2016-10-14)
Results of studies on single and multiple SnO2 nanowire gas sensors with impedance spectroscopy are reported. Equivalent circuit modeling is used to draw fundamental conclusions about the dominant conduction mechanism in ...
Tensile behavior of Cu50Zr50 metallic glass nanowire with a B2 crystalline precipitate
(Elsevier, 2018)
A molecular dynamics study of the effect of a single B2–CuZr precipitate on the mechanical properties of Cu50Zr50
metallic glass nanowires is presented. Four different samples are considered: three with a 2, 4 and 6 nm ...
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
(American Institute of Physics - AIPCollege Park, 2014)
Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. ...
Current mirror designed with GAA nanosheet MOSFETs from room temperature to 200◦C
(2021-09-01)
Current mirrors (CMs) are essential building blocks for biasing integrated circuits. The gate-all-around silicon nanosheet MOSFETs (GAA-NS) are excellent candidates for the sub 7 nm technology node. In this work, CMs ...
Predicting the performance of the inter-Coulombic electron capture from single-electron quantities
(IOP Publishing, 2019-11-01)
The probability of the inter-Coulombic electron capture (ICEC) is studied for nanowire-embedded quantum-dot pairs where electron capture in one dot leads to electron emission from the other. Previous studies pointed to an ...
Nanometer-scale Monitoring Of Quantum-confined Stark Effect And Emission Efficiency Droop In Multiple Gan/aln Quantum Disks In Nanowires
(American Physical Society, 2016)
Avaliação da distorção harmônica de nanofios transistores empilhados
(Centro Universitário FEI, São Bernardo do Campo, 2021)
Este trabalho estuda as características não lineares dos transistores nanofios empilhados,
implementados em tecnologia SOI (silicon-on-insulator), operando como amplificadores
operacionais de um único transistor. São ...
Avaliação da distorção harmônica de nanofios transistores empilhados
(Centro Universitário FEI, São Bernardo do Campo, 2021)
Este trabalho estuda as características não lineares dos transistores nanofios empilhados,
implementados em tecnologia SOI (silicon-on-insulator), operando como amplificadores
operacionais de um único transistor. São ...