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X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
(American Institute of Physics, 2014-08)
In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive ...
Modeling tunneling and generation mechanisms governing the nonequilibrium transient in pulsed metal-oxide-semiconductor diodes
(American Institute of Physics, 2000-12)
The transient behavior of tunnel metal-oxide-semiconductor structures, pulsed into inversion, is quantitatively described. A simple model for the measured transient currents is proposed, based on the integral form of the ...
Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures
(1990-12-01)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics ...
Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures
(1990-12-01)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics ...
Germanium Nanoparticles Grown At Different Deposition Times For Memory Device Applications
(ELSEVIER SCIENCE SALAUSANNE, 2016)
Germanium Nanoparticles Grown At Different Deposition Times For Memory Device Applications
(Elsevier Science SALausanne, 2016)
Bicone-like ZnO structure as high-performance butanone sensor
(2018-07-15)
Sensors based on metal oxide semiconductors have been widely applied for the detection of several volatile organic compounds (VOCs). However, the development of sensing materials with high selectivity, improved sensitivity, ...
Physical mechanism of progressive breakdown in gate oxides
(American Institute of Physics, 2014-06)
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of ...
Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors
(ELSEVIER SCIENCE SA, 2009)
Metal oxide semiconductor (MOS) capacitors with titanium oxide (TiO(x)) dielectric layer, deposited with different oxygen partial pressure (30,35 and 40%) and annealed at 550, 750 and 1000 degrees C, were fabricated and ...
Optical and structural properties of W03 as a function of the annealing temperature
(2012-11-27)
This work presents a study of effect of annealing temperatme on optical and structural properties of W03 that has been deposited by hot-filament metal oxide deposition (HFMOD). X-ray diffraction shows that the ...