This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics. As a result of this analysis, it was observed that a thinner TiN ...

The impact of the titanium nitride (TIN) gate electrode thickness has been investigated in n and p channel SOI multiple gate field effect transistors (MuGFETs) through low frequency noise charge pumping and static measurements ...

Ion-gated transistors employ ionic gating media (e.g. ionic liquids, polymer electrolytes, aqueous saline solutions) to modulate the density of the charge carriers in the transistor channel. Not only they operate at low ...

Zinc and copper are indispensable trace metals for life with a recognized role as catalysts in enzyme actions. We now review evidence supporting the role of trace metals as novel allosteric modulators of ionotropic receptors: ...

Zinc and copper are indispensable trace metals for life with a recognized role as catalysts in enzyme actions. We now review evidence supporting the role of trace metals as novel allosteric modulators of ionotropic receptors: ...

The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of ...

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...