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OTA Performance Comparison Designed with Experimental NW-MOSFET and NW-TFET Devices
(2019-10-14)
This paper presents, for the first time, the performance of an Operational Transconductance Amplifier (OTA) designed with the experimental data of Nanowire (NW) Si-Tunnel-FET compared to NW MOSFET devices. The experimental ...
Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
(Springer, 2012-12)
In this paper we present an analytical simulation study of Non-volatile MOSFET memory devices with Ag/Au nanoparticles/fullerene (C60) embedded gate dielectric stacks. We considered a long channel planar MOSFET, having a ...
Using the Octagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
(2020-12-04)
This article describes an experimental comparative study of the matching between the Octo conventional (octagonal gate geometry) and Conventional (rectangular gate shape) n-channel Metal-Oxide-Semiconductor (MOS) Field ...
Temperature influence on analog figures-of-merit of nanosheet nMOSFET devices for sub-7nm technology node
(2020-09-01)
This work analyzes the impact of temperature on the Analog figures of Merit of vertically stacked nanosheet nMOSFETs. The excellent electrostatic control between gate and channel results in a strong reduction of the short ...
Análisis comparativo del nivel de defectuosidad en los dispositivos de potencia SiC n-MOSFETs.
(Escuela Superior Politécnica de Chimborazo, 2019-12-25)
Currently, the field-effect transistors (MOSFETs) manufactured in silicon carbide (SiC) are an emerging technology that is entering the market for power devices, due to
the enormous ben efits of this family of semiconductors ...