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Recent progress in ab initio simulations of hafnia-based gate stacks
(SpringerNew YorkEUA, 2012)
The Atomic Layer Deposition Technique for the Fabrication of Memristive Devices: Impact of the Precursor on Pre-deposited Stack Materials
(IntechOpen, 2018)
Atomic layer deposition (ALD) is a standard technique employed to grow thin-filmoxides for a variety of applications. We describe the technique and demonstrate its usefor obtaining memristive devices. The metal/insulator/metal ...
Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
(Royal Society of Chemistry, 2014-01)
Resistance random access memory (ReRAM) is considered a promising candidate for the next generation of non-volatile memory. In this work, we fabricate Co/HfO2/Ti devices incorporating atomic-layer-deposited HfO2 thin films ...
Physical and electrical characteristics of atomic-layer deposition-HfO₂ films deposited on Si substrates having different silanol Si-OH densities
(Journal of Vacuum Science & Technology A, 2013)
Study of roughness evolution and layer stacking faults in short-period atomic layer deposited HfO2/Al2O3 multilayers
(Amer Inst PhysicsMelvilleEUA, 2011)
Bioanalysis by Immobilization of Antibodies on Hafnium(IV) Oxide with 3-Aminopropyltriethoxysilane
(Taylor and Francis, 2017-09-18)
Self-assembled monolayers of 3-aminopropyltriethoxysilane (APTES) are commonly used to promote adhesion between substrates and organic or metallic materials with applications ranging from advanced composites to biomolecular ...
Influence of oxygen atmosphere in the annealing of HfO2 thin films studied by perturbed angular correlation spectroscopy
(Instituut voor Kern- en Stralingsfysica, 2017)
Preparação e caracterização de filmes óxidos contendo componentes opticamente ativos
(Universidade Estadual Paulista (Unesp), 2001)
A preparação dos sistemas dopados com ions lantanídeos (Eu e Er): SnO2, HfO2, HfO2 disperso em matriz híbrida, SiO2-HfO2, Ta2O5, Ta2O5 disperso em matriz híbrida, através da metodologia sol gel, foi objetivo desta tese . ...
Nanopartículas de HfO2 embebidas en una matriz de óxido spin-on-glass como capa de atrapamiento de carga para dispositivos de memoria
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2012)