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The stability of titania-silica interface
(2018-02-15)
Silica is very often the catalyst support of choice for transition metal oxides such as titania, and specially anatase. Titania is an excellent absorber and photocatalyst for many organic molecules degradation. In order ...
Formation of nano-crystalline structure at the interface in Cu–C composite
(Elsevier, 1999)
Formation of Cu–C composite is a difficult technological problem: carbon is practically insoluble in copper. We show that the heat treatment of the Cu–C composite leads to the formation of a thin (approximately 50 nm) ...
Melhorias no projeto de interface como resultado de avaliações formativas de IHC: o caso de um Sistema Jurídico
(2020-08)
Evaluation is an important activity during solution design. Although there are specific evaluation methods for digital design, little is investigated about their effects on design process. This work presents a case study ...
Interfaces culturais de Mallarmé à World Wide Web
(Universidade Estadual Paulista (Unesp), 2005-04-26)
Os meios de comunicação digitais presenciaram a emergência das interfaces culturais a partir da última década do século XX. Fruto do desenvolvimento de pesquisa em ciência computacional, especificamente sobre a questão da ...
Interfaces culturais de Mallarmé à World Wide Web
(Universidade Estadual Paulista (UNESP), 2014)
Potential-mediated interaction between dextran sulfate and negatively charged phospholipids films at air/water and liquid/liquid interfaces
(Elsevier, 2013-10)
The effect of dextran sulfate (DS) on distearoyl phosphatidyl glycerol (DSPG) and distearoyl phosphatidic acid (DSPA) films formed in the presence of Ca2Cl, LiCl or KCl as aqueous electrolytes, was analyzed by cyclic ...
Formation of nano-crystalline structure at the interface in Cu???C composite
(Elsevier, 1999-04)
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...