Buscar
Mostrando ítems 1-10 de 1844
Extent prediction of the information and influence propagation in online social networks
(2021)
We present a new mathematical model that predicts the number of users informed and influenced by messages that are propagated in an online social network. Our model is based on a new way of quantifying the tie-strength, ...
Electrical activities and pressure pain threshold in oral contraceptives users and nonusers
(2014)
The aim is to evaluate the influence of oral contraceptive intake and menstrual cycle on the electrical activity and pressure pain threshold from anterior temporal and masseter muscles. Twenty-eight women on reproductive ...
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
(2008)
Fin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have ...
Two center and Coulomb effects in near-threshold ionization of H+ 2 by short laser pulses
(Taylor & Francis Ltd, 2009-01)
We investigate the influence of the Coulomb potential as well as the two center contribution in the angle-resolved photoelectron spectrum, resulting from the single ionization of H[image omitted] molecules by short laser ...
Ground plane impact on the threshold voltage of relaxed ge pfinfets
(2018-10-26)
In this paper the Ground Plane (GP) influence on the threshold voltage of Ge pFinFET devices is investigated. In order to explain the experimental threshold voltage variation with fin width, TCAD simulations have been ...
Analysis of temperature-induced saturation threshold voltage degradation in deep-submicrometer ultrathin SOI MOSFETs
(2005)
This paper presents a systematic study of the temperature lowering influence on the saturation threshold voltage degradation in ultrathin deep-submicrometer fully depleted silicon-on-insulator (SOI) MOSFETs. It is observed ...
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
(ELECTROCHEMICAL SOC INC, 2008)
Fin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have ...