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Impurity states in the narrow band-gap semiconductor n-type InSb
(1996)
We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant ...
Influence of nonmagnetic impurity scattering on spin dynamics in diluted magnetic semiconductors
(American Physical Society, 2017-01)
The doping of semiconductors with magnetic impurities gives rise not only to a spin-spin interaction between quasifree carriers and magnetic impurities but also to a local spin-independent disorder potential for the carriers. ...
Strong Correlations Generically Protect D-wave Superconductivity Against Disorder
(AMER PHYSICAL SOCCOLLEGE PK, 2016)
Partial preservation of chiral symmetry and colossal magnetoresistance in adatom-doped graphene
(American Physical Society, 2014-02-15)
We analyze the electronic properties of adatom-doped graphene in the low-impurity-concentration regime. We focus on the Anderson localized regime and calculate the localization length ξ as a function of the electron doping ...
Localization effects and inelastic scattering in disordered heavy electrons
(American Physical SocCollege PkEUA, 2003)
Fibonacci oscillators in the Landau diamagnetism problem
(Elsevier, 2014-10-01)
Thermal and electrical properties of a solid through Fibonacci oscillators
(Elsevier, 2016-02-01)
Transport of localized and extended excitations in chains embedded with randomly distributed linear and nonlinear n-mers
(AMER PHYSICAL SOC., 2016)
We examine the transport of extended and localized excitations in one-dimensional linear chains populated by linear and nonlinear symmetric identical n-mers (with n = 3, 4, 5, and 6), randomly distributed. First, we examine ...