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Strain- and electric field-induced band gap modulation in nitride nanomembranes
(2013-05-15)
The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band ...
Strain- and electric field-induced band gap modulation in nitride nanomembranes
(2013-05-15)
The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band ...
Non-Linear electron mobility in n-doped III-Nitrides
(Sociedade Brasileira de Física, 2006)
Nonlinear hole transport and nonequilibrium thermodynamics in group III-nitrides under the influence of electric fields
(Amer Inst PhysicsMelvilleEUA, 2007)
Tissue response around silicon nitride implants in rabbits
(WILEY-LISS, 2008)
The chemical and dimensional stability associated with suitable fracture toughness and propitious tribological characteristics make silicon nitride-based ceramics potential candidates for biomedical applications, mainly ...
Direct profiling of polarization fields in nitride semiconductors at nanometric scale using electron holography in the transmission electron microscope
(Universidad Nacional de Ingeniería, 2019)
Direct profiling of polarization fields in nitride semiconductors at nanometric scale using electron holography in the transmission electron microscope
(Universidad Nacional de Ingeniería, 2019)