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Influence of microstructure and hydrogen concentration on amorphous silicon crystallization
(Elsevier Science Sa, 2010-07)
Hydrogenated amorphous silicon samples were deposited on glass substrates at different temperatures by high 20 frequency plasma-enhanced chemical vapor deposition. In this way, samples with different hydrogen 21 concentrations ...
Characterization of a hydrogenated amorphous silicon microbolometer array
(2012-12-17)
We present the characterization of a boron doped hydrogenated amorphous silicon (a-Si:H) thermosensor bolometer
array for far infrared detection. The array was fabricated over a silicon wafer on a 0.4 μm silicon-nitride ...
Hydrogen role on the properties of amorphous silicon nitride
(1999-08-15)
We have developed an interatomic potential to investigate structural properties of hydrogenated amorphous silicon nitride. The interatomic potential used the Tersoff functional form to describe the Si–Si, Si–N, Si–H, N–H, ...
Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method
(2012-12-17)
Microcrystalline-amorphous doped hydrogenated silicon (tc a-Si:H) samples were prepared by using plasma
enhanced chemical vapor deposition (PECVD) method. The samples were deposited on coming substrates at 270 °C and
then ...
Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques
(American Institute of Physics, 2012-07)
In this paper, we show that the combination of different characterization techniques based on the photoconductivity of hydrogenated amorphous silicon can be a tool to investigate on the density of states and transport ...
Bismuth doping of hydrogenated amorphous germanium thin films
(Elsevier Science SaLausanneSuíça, 2006)
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates
(glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 ◦C for up to
14 h. The annealed ...
a-Si:H crystallization from isothermal annealing and its dependence on the substrate used
(2012-11-27)
We present hydrogenated amorphous silicon ( a-Si:H) films which were deposited on two different sub
strates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250"( for up to
14 h.The ...
Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
(Elsevier Science Sa, 2008-04)
In the scientific literature the density of states of hydrogenated amorphous silicon has been assumed to be either uniform or spatially variable inside the intrinsic layer of p-i-n solar cells. The dependence of the dark ...