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NONLINEAR TRANSPORT IN PHOTOEXCITED PLASMA IN SEMICONDUCTORS - NONOHMIC MOBILITY AND A GENERALIZED EINSTEIN RELATION
(American Physical SocCollege PkEUA, 1995)
Una breve aproximación a las características de los materiales orgánicos empleados como semiconductores en dispositivos electrónicosAn approach to the characteristics of the organic materials used as semiconductors in electronic devices
(Instituto Universitario de la Paz, 2018-10-20)
En este trabajo se realiza una breve descripción de las características de los materiales orgánicos empleados como semiconductores en dispositivos electrónicos. La electrónica orgánica es una tecnología emergente y fascinante ...
STRUCTURED ULTRAFAST MOBILITY IN HIGHLY PHOTOEXCITED SEMICONDUCTORS
(Pergamon-elsevier Science LtdOxfordInglaterra, 1988)
Nonlinear hole transport and nonequilibrium thermodynamics in group III-nitrides under the influence of electric fields
(Amer Inst PhysicsMelvilleEUA, 2007)
Disorder Effect On The Anisotropic Resistivity Of Phosphorene Determined By A Tight-binding Model
(Amer Physical SocCollege Park, Maryland, 2016)
Enhanced magneto-optical oscillations from two-dimensional hole-gases in the presence of Mn ions
(Amer Inst PhysicsMelvilleEUA, 2011)
Gaas/algaas nanoheterostructures: simulation and application on high mobility transistors
(Universidad Nacional de Colombia - Facultad de Ingeniería, 2011)
This work analyses the features of GaAs/AlGaAs heterostructure, highlighting semiconductor junction properties. Charge confinement was produced when two materials having different band-gap were fixed; such high electron ...
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...