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A review on dielectric breakdown in thin dielectrics: Silicon Dioxide, High-k, and Layered Dielectrics
(Wiley VCH Verlag, 2019-04-30)
Thin dielectric films are essential components of most micro- and nanoelectronic devices, and they have played a key role in the huge development that the semiconductor industry has experienced during the last 50 years. ...
Non-Linear Dielectric Properties of PLMN-PT Relaxor Ferroelectrics
(Taylor & Francis Ltd, 2008-01-01)
Recent investigations on the non-linear (NL) dielectric properties of relaxor ferroelectrics systems, not only as ceramic bodies, but also, in thin films, have showed a significant technological and scientific interest. ...
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films
(2021-06-01)
BiFeO3 thin films were prepared using the chemical solution route on Pt/TiO2/SiO2/Si(100) substrates under different crystallization kinetics. The crystallization kinetic effects on the dielectric and electrical properties ...
Effects of strontium/lanthanum co-doping on the dielectric properties of CaCu3Ti4O12 prepared by reactive sintering
(Elsevier Ltd, 2018)
The extremely high dielectric constant of the cubic perovskite CaCu3Ti4O12 (CCTO) has attracted increasing
attention for a variety of capacitive elements in microelectronic device applications. In this research, the ...
GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
(PERGAMON-ELSEVIER SCIENCE LTDOXFORD, 2012)
This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics. As a result of this analysis, it was observed that a thinner TiN ...
Non-Linear Dielectric Properties of PLMN-PT Relaxor Ferroelectrics
(Taylor & Francis Ltd, 2008-01-01)
Recent investigations on the non-linear (NL) dielectric properties of relaxor ferroelectrics systems, not only as ceramic bodies, but also, in thin films, have showed a significant technological and scientific interest. ...
Mechanical and electrical driving field induced high-frequency dielectric anomalies in ferroelectric systems
(Iop Publishing Ltd, 2007-09-26)
Polycrystalline or single-crystal ferroelectric materials present dielectric dispersion in the frequency range 100 MHz-1 GHz that has been attributed to a dispersive ( relaxation-like) mechanism as well as a resonant ...
Mechanical and electrical driving field induced high-frequency dielectric anomalies in ferroelectric systems
(Iop Publishing Ltd, 2007-09-26)
Polycrystalline or single-crystal ferroelectric materials present dielectric dispersion in the frequency range 100 MHz-1 GHz that has been attributed to a dispersive ( relaxation-like) mechanism as well as a resonant ...
Electronic, vibrational and related properties of group IV metal oxides by ab initio calculations
(ELSEVIER SCIENCE BV, 2008)
We present our theoretical results for the structural, electronic, vibrational and optical properties of MO(2) (M = Sn, Zr, Hf and Ti) obtained by first-principles calculations. Relativistic effects are demonstrated to be ...
Caracterización de Spin-on-Glass como dieléctrico de compuerta en dispositivos MOS y como material vehículo para el depósito de HfO2
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2010)