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Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures
(Ieee-inst Electrical Electronics Engineers Inc, 2021-07-01)
The analysis of vertically stacked nanosheet (NS) n-type transistors with two different metal gate-stacks (with a total thickness of 7.5 and 4.7 nm) is presented in this work from room temperature to 200 degrees C. The ...
High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
(2005)
This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...
High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures
(2005)
This work studies the use of channel engineering by means of graded-channel profile on double gate SOI MOSFETs for improving the analog performance and comparing their output characteristics with conventional double gate ...
Analysis of temperature variation influence on the analog performance of 45 degrees rotated triple-gate nMuGFETs
(PERGAMON-ELSEVIER SCIENCE LTDOXFORD, 2012)
This work presents the analog performance of n-type triple-gate MuGFETs with high-k dielectrics and TiN gate material fabricated in 45 degrees rotated SOI substrates comparing their performance with standard MuGFETs ...
Adaptive Background Compensation of Frequency Interleaved DACs with Application to Coherent Optical Transceivers
(Institute of Electrical and Electronics Engineers, 2021-03)
Digital-to-analog converters (DACs) with bandwidths larger than 70 GHz and sampling rates in excess of 170 GS/s will soon be required in ultra-high speed communication applications such as coherent optical transceivers ...
Trade-off analysis between gm/ID and fT of nanosheet NMOS transistors with different metal gate stack at high temperature
(2022-05-01)
In this work the gate-all-around nanosheet transistor is analyzed at high temperatures, from analog point of view. At first, the gate-all-around nanosheet (NS) behavior is compared with reported omega-gate nanowire (NW) ...
Highly integrated laser-modulator module for high-speed high dynamic range analog transmission
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2005)