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Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
(2020-08-10)
This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect ...
Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
(2020-08-10)
This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect ...
Methodology to optimize and reduce the total gate area of robust operational transconductance amplifiers by using diamond layout style for MOSFETs
(2020-11-22)
This paper describes a pioneering methodology to design, optimize, and reduce the total gate area of robust Operational
Transconductance Amplifiers (OTAs). The Single-Ended Single-Stage (SESS) OTA has been chosen to ...
Electrical behavior of the Diamond layout style for MOSFETs in X-rays ionizing radiation environments
(2015)
© 2015 Elsevier B.V. All rights reserved.This paper aims to describe some innovative layout styles, which are capable to boost the electrical performance and, in the same time, the Total Ionizing Dose (TID) tolerance of ...
Diamond layout style impact on SOI MOSFET in high temperature environment
(2015)
© 2015 Elsevier Ltd.This work performs an experimental comparative study between the Diamond (hexagonal gate geometry) and Standard layouts styles for Metal-Oxide-Semiconductor Field Effect Transistor in high temperatures ...
Using diamond layout style to boost MOSFET frequency response of analogue IC
(2014)
A way to improve the metal-oxide-semiconductor field effect transistor (MOSFET) analogue electrical performance, still little explored, is to modify their aspect form or ratio (AR) by the use of innovative layout styles. ...
Using diamond layout style to boost MOSFET frequency response of analogue IC
(2014)
A way to improve the metal-oxide-semiconductor field effect transistor (MOSFET) analogue electrical performance, still little explored, is to modify their aspect form or ratio (AR) by the use of innovative layout styles. ...