X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) data are used for investigating heterostructure samples of GaAs/SnO2. XANES data are used for analyzing the local organization ...

Defects that exhibit some sort of lattice relaxation usually present an energy barrier for electron capture, and the possibility of developing the phenomenon known as persistent photoconductivity (PPC). In this effect, ...

Deposition of an SnO2 thin film was carried out by sol-gel-dip-coating and doped with Ce3+ or Eu3+, and a GaAs layer was deposited by resistive evaporation or sputtering. This investigation combines the emission properties ...

Aiming at optoelectronic applications, a heterostructure based on Eu-doped tin oxide (SnO2) and copper sulfide (Cu2−xS) is built. SnO2 thin films doped with 2 at.% Eu were obtained by the sol–gel dip-coating and spin-coating ...

Gold–iron oxide nano-heterostructures with a clear and well-defined morphology were prepared via a seed-assisted method. The synthesis process and the events of heterogeneous nucleation during the decomposition of the iron ...

BiFeO3 (BFO) and LaFeO3 (LFO) heterostructures were obtained at room temperature on Pt/TiO2/SiO2/Si (100) substrates by chemical solution deposition. The films were coherently grown at a temperature of 500°C for 2h. The ...

Effects of both metamaterial inclusion and lack of inversion symmetry on the localized modes in one-dimensional photonic heterostructures under normal incidence are investigated. Each structure consists of two semi-infinite ...

Heterostructures with competing magnetic interactions are often exploited for their tailored new functionalities. Exchange bias is one such outcome of interfacial coupling across ferromagnetic-antiferromagnetic, ...