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XPS study of the chemical bonding in hydrogenated amorphous germanium-carbon alloys
(Springer-verlagNew YorkEUA, 2000)
Optoelectronic and structural properties of a-Ge1-xCx : H prepared by rf reactive cosputtering
(Amer Inst PhysicsWoodburyEUA, 1998)
Structural Properties Of A-ge1-xcx:h Alloys Prepared By The Rf Sputtering Technique
(MRS, Warrendale, PA, United States, 1997)
Growth and characterization of polycrystalline Ge1-xC x by reactive pulsed laser deposition
(2011)
Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, Ts, on C incorporation to substitutional ...
Grading scale for prediction of outcome in primary intracerebral hemorrhages
(2011)
Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, Ts, on C incorporation to substitutional ...