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Strain- and electric field-induced band gap modulation in nitride nanomembranes
(2013-05-15)
The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band ...
Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
(Institute of Electrical and Electronics Engineers Inc., 2014)
A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The technique can model one of the most critical phenomena in wideband communications, called frequency dispersion effects. Results ...
Rare-earth impurities in gallium nitride: The role of the Hubbard potential
(ELSEVIER SCIENCE SALAUSANNE, 2012)
We performed a first principles investigation on the electronic properties of 4f-rare earth substitutional impurities in zincblende gallium nitride (GaN:REGa, with RE=Eu, Gd, Tb, Dy, Ho, Er and Tm). The calculations were ...
Electronic structure of GaN nanotubes
(2017-02-01)
Nanotube properties are strongly dependent on their structures. In this study, gallium nitride nanotubes (GaNNTs) are analyzed in armchair and zigzag conformations. The wurtzite GaN (0001) surface is used to model the ...
Strain- and electric field-induced band gap modulation in nitride nanomembranes
(2013-05-15)
The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band ...
Nonlinear hole transport and nonequilibrium thermodynamics in group III-nitrides under the influence of electric fields
(Amer Inst PhysicsMelvilleEUA, 2007)