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Exploring Crystal Phase Switching In Gap Nanowires
(AMER CHEMICAL SOCWASHINGTON, 2015)
Interaction Between Lamellar Twinning And Catalyst Dynamics In Spontaneous Core-shell Ingap Nanowires
(ROYAL SOC CHEMISTRYCAMBRIDGE, 2015)
Nanofios de arseneto de gálio e arseneto de alumínio
(Universidade Federal de Santa MariaCentro de Ciências Naturais e Exatas, 2008-01-30)
We present a first principle study of both bulk e nanowire phases of GaAs and AlAs. We first reproduced the known properties of the bulk materials and then applied the same methodology to study the properties with the ...
Spontaneous Periodic Diameter Oscillations in InP Nanowires: The Role of Interface Instabilities
(Amer Chemical SocWashingtonEUA, 2013)
Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
(Elsevier Science Sa, 2010-04)
Vertically aligned GaAs nanowire (NW) bundles grown by gas-source molecular beam epitaxy on an n-doped GaAs substrate by a metal catalysis method and embedded in an insulating matrix (SU8-2) were studied by impedance ...
Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
(Iop Publishing, 2013-09)
Fabrication, current-voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure ...
Mecanismos de crescimento e propriedades elétricas de nanofios de InGaAs e GaAs
(Universidade Federal de Minas GeraisUFMG, 2016-10-17)
This work presents the experimental and theoretical results obtained from the analysis of the growth of nanowires ternary allo InGaAs, with mole fractions of 5, 10, 15 and 20 % of InAs and characterization of properties ...
Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon
(Amer Chemical SocWashingtonEUA, 2012)
Kinetic Effects in InP Nanowire Growth and Stacking Fault Formation: The Role of Interface Roughening
(Amer Chemical SocWashingtonEUA, 2011)
Development of seminconductor nanowire materials for electronic and photonics applications
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2019-12-05)
The thesis is concerned with study of GaAs nanowires fabricated on Si substrate.
The possibility of growing III-V semiconductor materials directly on silicon in the
form of nanowires is an attractive route to the integration ...