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Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering
(2006-09-01)
The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow ...
Analog performance of GaN/AlGaN high-electron-mobility transistors
(2021-09-01)
In this paper, the analog properties of advanced GaN/AlGaN High-Electron-Mobility Transistors (HEMTs) are studied as a function of temperature (T). The drain current, the threshold voltage, the transconductance and the ...
Indium-Modified growth kinetis of cubic and hexagonal GaN in molecular beam epitaxy
(American Institute of Physics (AIP), 2013)
The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders
(Elsevier B.V., 2006-05-01)
Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ...
The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders
(Elsevier B.V., 2006-05-01)
Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ...
Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering
(2006-09-01)
The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow ...
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors
(2021-09-01)
In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and ...