The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker ...

In this paper, the low-frequency (LF) noise in standard n-channel triple-gate Bulk FinFETs has been experimentally investigated with variation in the fin widths (W<inf>Fin</inf>), channel lengths (L) and gate dielectric. ...

Track-and-hold (T&H) circuits are used in a variety of applications. Noise is a key parameter in a T&H and can be traded for settling time or power consumption. The classical T&H noise design methodology considers only ...

In this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced ...

Although there is still controversy about its origin, the designer requires accurate models to estimate 1/f noise of the MOS transistor in terms of its size, bias point and technology. Conventional models present limitations, ...