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Urbach energy parameter of flash evaporated amorphous gallium arsenide films
(2002-04-01)
The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from ...
Urbach energy parameter of flash evaporated amorphous gallium arsenide films
(2002-04-01)
The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from ...
THE GROWTH AND ELECTROCHEMICAL PROPERTIES OF V6O13 FLASH-EVAPORATED FILMS
(Elsevier Science BvAmsterdamHolanda, 1995)
CRYSTALLIZATION PROCESS AND CHEMICAL DISORDER IN FLASH EVAPORATED AMORPHOUS GALLIUM ANTIMONIDE FILMS
(Materials Research Society, 1994-01-01)
CRYSTALLIZATION PROCESS AND CHEMICAL DISORDER IN FLASH EVAPORATED AMORPHOUS GALLIUM ANTIMONIDE FILMS
(Materials Research Society, 1994-01-01)
Stoichiometry unbalance and photoluminescence emission in Ga1-XAsX films prepared by flash evaporation
(Elsevier B.V., 2004-06-15)
Both narrow and broad photoluminescence bands were observed in Ga1-XAsX films prepared by flash evaporation of polycrystalline GaAs containing native C impurities. The observed narrow crystalline-like bands are similar to ...
Crystallization process and chemical disorder in flash evaporated amorphous gallium antimonide films
(1994-01-01)
In this work we describe a flash evaporation system specially built to produce amorphous films of III-V compounds and characterize GaSb films using optical, electrical and X-Ray diffraction measurements. Changes in the ...