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A novel one-dimensional model to predict fin efficiency of continuous fin-tube heat exchangers
(Pergamon-Elsevier Science Ltd, 2019-02-25)
The objective of this contribution is to present a novel one-dimensional (1D) model to predict the heat transfer rate from (or to) continuous fin-and-tube heat exchangers. In this model, called two equivalent radial fins ...
Proton Radiation Influence on SOI FinFET Trade-Off between Transistor Efficiency and Unit Gain Frequency
(Ieee, 2016-01-01)
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, ...
New method for observing self-heating effect using transistor efficiency signature
(Ieee, 2017-01-01)
This paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through ...
New method for observing self-heating effect using transistor efficiency signature
(2018-03-07)
This paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through ...
Evaluación de Intercambiadores de Calor Compactos de Tubos Aletados
(Centro de Información Tecnológica, 2004)
Thermal efficiency of open-cell metal foams: Impact of foam thickness by comparing correlations and numerical modeling
(2022-05-05)
Engineered surfaces are increasingly used to cool electronic devices with dielectric fluids in two-phase change. A common type of such surfaces is the open-cell metal foam. In this work, our goal was two-fold, to assess ...
Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
(2016-11-02)
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, ...
Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
(2015)
© 2014 Elsevier Ltd. All rights reserved.Three techniques to implement mechanical stress in n-channel Multiple Gate MOSFETs (MuGFETs) are investigated through 3D simulations and transconductance measurements. They are: ...