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Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
(Amer Inst PhysicsWoodburyEUA, 1999)
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
(Amer Chemical Soc, 2017-09-01)
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on,graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene ...
Raman and FTIR Spectroscopy of GaSb and AlxGai.xSb Alloys with Nanometric Thickness Grown at Low Temperatures by Liquid Phase Epitaxy
(2012-12-17)
GaSb and AlxGai.xSb thin layers were grown on (001) oriented GaSb substrates by liquid phase epitaxy technique at low
temperatures. Until now, there are no previous reports on the growth of this alloy at temperatures lower ...
Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy
(American Vacuum Society, 2013-01-16)
Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene
(Spie-int Soc Optical Engineering, 2018-01-01)
We investigate the formation of GaN nanowires in plasma-assisted molecular beam epitaxy on epitaxial graphene prepared on SiC(0001) using the surface graphitization method in an inductively heated furnace. The pristine ...
REAL-TIME OPTICAL DIAGNOSTICS FOR MEASURING AND CONTROLLING EPITAXIAL-GROWTH
(Elsevier Science SaLausanneSuíça, 1993)
Influence of substrate conductivity on layer thickness in LPE GaAs
(2012-11-26)
Differences have been foundon the growth rate of epitaxial layers grown simultaneously on semi-insulating andP
andN type (1 0 0) GaAs substrates from the same Ga–As liquidsolution. The layers were grown by LPE at 786 C ...
ANALYSIS OF INTERFACIAL MISFIT DISLOCATION BY X-RAY MULTIPLE DIFFRACTION
(Pergamon-elsevier Science LtdOxfordInglaterra, 1993)