We recently predicted that the interatomic Coulombic electron capture (ICEC) process, a long-range electron correlation driven capture process, is achievable in gated double quantum dots (DQDs). In ICEC an incoming electron ...

It was recently shown that the electron transfer rate constant of an electrochemical reaction and the conductance quantum are correlated with electrochemical capacitance [1]. The association of these two separate concepts ...

A new phenomenological model is proposed to describe the evolution of the Fermi surface (FS) in a wide range of dopings. It reproduces the key features of the cuprates in the underdoped phase above the superconducting ...

The objective of this paper is to identify and analyze various aspects of the internal and external operations management of Brazil's electronics sector and to consider the opportunities for and the threats to increasing ...

The search of new means of generating and controlling topological states of matter is at the front of many joint efforts, including band-gap engineering by doping and light-induced topological states. Most of our ...

We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this ...

The electron density localization in insulator and semiconductor elemental cubic materials with diamond structure, carbon, silicon, germanium, and tin, and good metallic conductors with face centered cubic structure such ...