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On the influence of pyrochlore phase on ferroelectric and dielectric properties of PZT thin films
(2020-02-17)
The intrinsic contribution of dielectric permittivity was obtained in thin films of PZT pyrolyzed at different temperatures. Pyrochlore phases were observed in films pyrolyzed at temperatures above 350 °C, while only the ...
Dielectric properties of pure and lanthanum modified bismuth titanate thin films
(Elsevier B.V. Sa, 2008-04-24)
We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a ...
Dielectric properties of pure and lanthanum modified bismuth titanate thin films
(Elsevier B.V. Sa, 2008-04-24)
We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a ...
Processing of BiFeO3 thin films to control their dielectric response
(Taylor & Francis Ltd, 2020-05-18)
BiFeO3 (BFO) thin films were studied to control their oxygen-related processing parameters in order to obtain specific electrical characteristics in terms of conductivity and dielectric relaxation. BFO thin films prepared ...
Dielectric relaxation and electrical conductivity of random oriented BiFeO3 thin films
(Taylor & Francis Ltd, 2019-06-11)
Complex impedance and electric modulus spectroscopies were used to investigate the dielectric relaxation and conductivity of random oriented BiFeO3 thin films. Thermally activated charge transport models yielded activation ...
Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method
(2002-01-01)
Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In ...
Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method
(Elsevier B.V. Sa, 2011-10-13)
CaCu3Ti4O12 (stoichiometric) and Ca1.1Cu2.9Ti4O12 (non-stoichiometric) thin films have been prepared by the soft chemical method on Pt/Ti/SiO2/Si substrates, and their electrical and dielectric properties have been compared ...
Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method
(Elsevier B.V. Sa, 2011-10-13)
CaCu3Ti4O12 (stoichiometric) and Ca1.1Cu2.9Ti4O12 (non-stoichiometric) thin films have been prepared by the soft chemical method on Pt/Ti/SiO2/Si substrates, and their electrical and dielectric properties have been compared ...
Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route
(Springer, 2007-12-01)
Bi0.92La0.08FeO3 (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air ...
Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route
(Springer, 2007-12-01)
Bi0.92La0.08FeO3 (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air ...